The construction site of SK hynix's Yongin semiconductor cluster in Gyeonggi Province, Jan. 20 / Yonhap
SK hynix will invest 21.6 trillion won ($15.07 billion) by 2030 to build five additional clean rooms for its first fab in its Yongin semiconductor cluster in Gyeonggi Province, the company said Wednesday.
SK hynix approved the plan at a board meeting, saying the investment will run from March 1 through Dec. 31, 2030. The amount accounts for 29.23 percent of the company’s equity.
In July 2024, SK hynix decided to invest 9.4 trillion won to build the first clean room and other facilities needed to operate the first fab. Combined with the 21.6 trillion won approved on Wednesday, the total investment for the first fab will reach 31 trillion won.
The memory giant is now building the first fab under its 600 trillion won initiative to set up four advanced fabs on a 1.97 million square meter site in the cluster in Yongin.
An artist's impression of SK hynix's first fab in its Yongin semiconductor cluster in Gyeonggi Province / Courtesy of SK hynix
The fresh investment will be used to complete the structure of the first fab and build clean rooms from Phase 2 through Phase 6. As a result, the first fab will consist of two structural buildings and six clean rooms in total.
“Through this investment, we expect to secure physical production capacity in advance and strengthen our ability to respond to customer demand,” the company said.
“Thanks to efficient process management, we expect the opening of the clean rooms to be brought forward from May 2027 to February of the same year.”
SK hynix plans to produce next-generation DRAM chips, including high-bandwidth memory for artificial intelligence (AI) accelerators, at the first fab. It is also planning to use the facility for other products depending on market demand.
Source: Korea Times News
